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Guangzhou Sande Electric Co.,Ltd. Servo Motor Driver Specialist
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Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module

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Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module

Brand Name : Toshiba
Model Number : MG200Q1US51
Certification : ROHS,CE,UL,CCC,VDE
Place of Origin : Japan
MOQ : 1pcs
Price : Negotiable
Payment Terms : Western Union, T/T, L/C,Paypal
Supply Ability : 1000pcs/Day
Delivery Time : 0-3 days
Packaging Details : Original Packing With Good Protection Material
Application : High Power Switching
Alternate Item Number : MG2OOQ1US51
Condition : New
Warranty : One Year
Product Name : Transistor Module
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Toshiba IGBT Power Module MG200Q1US51 Transistor Module


Product Description

Manufactured by: Toshiba America, Inc.
Part number: MG200Q1US51

Part Category: Transistors
Description: 300A, 1200V, N-CHANNEL IGBT
Collector-Emitter Voltage: 1200V
Gate-Emitter Voltage: 20V
Collector Current (DC): 300A
Forward Current: (DC): 200A
Collector Power Dissipation: 1500W
Junction Temperature: 150C
Isolation Voltage (AC 1 min.): 2500V
Input Capacitance (VCE=10V, VGE=0,f=1MHz): 24nF
Switching Time: (Inductive Load VCC=600V, IC=200A, VGE=15V, RG=4.7Ω)
-Turn-on Time: 0.05s typ.
-Rise Time: 0.05s typ.
-Turn-on Time: 0.2s typ.
-Turn-off Delay Time: 0.5s typ.
-Fall Time: 0.1s typ. ; 0.3s max.
-Turn-off Time: 0.6s typ.
Forward Voltage(IF=200A, VGE=0): 2.4V typ. ;3.5V max
Reverse Recovery Time: 0.15s typ. ; 0.3s max.
(IF=200A, VGE=-10V, di/dt=700A/s)


High input impedance
High Speed
Low saturation voltage
Electrodes are isolated from case


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